PERC Technology

PERC stands for Passivated Emitter Rear Cell which means transmitter and back passivation cell technology.

Comparing with BSF cell on the back, PERC cells use passivation film to passivate the back, replace the traditional all-aluminum back field, enhance the internal back reflection of light in the silicon-based, reduce the compound rate on the back and improves the cell efficiency.

• PERC module’s efficiency up to 21.5% reaching output of Pmax to 555watt.

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• Yearly degradation low to 0.55%/Year and bifacial PERC technology makes gaining energy from module’s backside possible.

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• PERC cells ensures nice mechanical load performance of module.

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N-Type TOPCON Technology

TOPCON stands for Tunnel Oxide Passivated Contact.

The back of the cell consists of an ultrathin layer of silicon oxide (1~2nm) and phosphorus-doped microcrystalline amorphous silicon film to create a passivation contact structure. The passivation properties are activated through annealing, which alters the crystallinity of the silicon films from a microcrystalline amorphous mix to polycrystalline.

• TOPCON module’s efficiency up to 22.6% reaching output of Pmax to 585watt.

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• Yearly degradation low to 0.40%/Year and higher Bifacility ensures gaining more energy from module’s backside.

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• -0.30%/ ℃ temperature coefficient of Pmax.

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N-Type Power⁺ Technology

Power+ stands for more power comparing with old size.

Power+ are using rectangle cells to laminate more client’s value size solar modules. Power+ solar modules are perfectly size and higher output comparing with regular N-Type solar modules.

• Power+ module’s efficiency up to 23.0% reaching output of Pmax to 620watt

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• Module’s Size perfectly fit 40HC which saves up to 6% cost on delivery

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• Higher output decreasing BOS and LCOE

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N-Type 0BB HJT Technology

0BB stands for 0 busbar technology.HJT stands for Heterojunction with Intrinsic Thin-film.

HJT is a symmetrical cell with N-type crystalline silicon in the middle. Front: intrinsic and P-type amorphous silicon form P-N junctions. Back: intrinsic and N-type amorphous silicon create a back surface field. Transparent conductive films aid conductivity; screen-printing forms double-sided electrodes.

• Enhancing current collection and module output by reducing busbar shadows.

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• Decreasing risk of microcrack and TCO layer ensures 0 PID.

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• Temperature Coefficient of Pmax low to -0.24%/℃ and 90% Bifaciality ensures gaining more energy from backside.

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